Gallium nitride compound semiconductor light emitting element and light source provided with said light emitting element

摘要

In a gallium nitride based compound semiconductor light-emitting element including an active layer, the active layer includes a well layer 104 and a barrier layer 103, each of which is a semiconductor layer of which the growing plane is an m plane. The well layer 104 has a lower surface and an upper surface and has an In composition distribution in which the composition of In changes according to a distance from the lower surface in a thickness direction of the well layer 104. The In composition of the well layer 104 becomes a local minimum at a level that is defined by a certain distance from the lower surface and that portion of the well layer 104 where the In composition becomes the local minimum runs parallel to the lower surface.

主权项

1. A gallium nitride based compound semiconductor light-emitting element comprising an active layer,
the active layer including a well layer and a barrier layer, each of the well layer and the barrier layer being a semiconductor layer which has an m plane as its growing plane, and the well layer having a lower surface and an upper surface and having an In composition distribution in which the composition of In changes according to a distance from the lower surface in a thickness direction of the well layer, and wherein the In composition of the well layer has a local minimum at a level that is defined by a certain distance from the lower surface and a portion of the well layer where the In composition has the local minimum runs parallel to the lower surface, and the In composition of the well layer has a local minimum at multiple levels that are defined by multiple different distance from the lower surface and has a local maximum between those levels.