发明名称 Substrate cleaving under controlled stress conditions
摘要 A thickness of material may be detached from a substrate along a cleave plane, utilizing a cleaving process controlled by a releasable constraint plate. In some embodiments this constraint plate may comprise a plate that can couple side forces (the “P-plate”) and a thin, softer compliant layer (the “S-layer”) situated between the P-plate and the substrate. In certain embodiments a porous surface within the releasable constraint plate and in contact to the substrate, allows the constraint plate to be secured to the substrate via a first pressure differential. Application of a combination of a second pressure differential within a pre-existing cleaved portion, and a linear force to a side of the releasable constraint plate bound to the substrate, generates loading that results in controlled cleaving along the cleave plane.
申请公布号 US8993410(B2) 申请公布日期 2015.03.31
申请号 US201113225172 申请日期 2011.09.02
申请人 Silicon Genesis Corporation 发明人 Henley Francois;Lamm Al;Chow Yi-Lei
分类号 H01L21/30;H01L21/762;H01L21/683;H01L21/67;H01L31/0392;H01L31/068;H01L31/0687;H01L31/18;H01L21/78;H01L21/304 主分类号 H01L21/30
代理机构 代理人
主权项 1. A method comprising: providing a plate in communication with a surface of a workpiece including a subsurface cleaved portion extending a part of a length of the workpiece; constraining movement of the plate along a first axis; and applying compressed gas to a gap between the cleaved portion and the remaining workpiece, so that a compliant characteristic along the first axis accommodates a moment acting upon the subsurface cleaved portion during a controlled cleaving.
地址 San Jose CA US