发明名称 |
Substrate cleaving under controlled stress conditions |
摘要 |
A thickness of material may be detached from a substrate along a cleave plane, utilizing a cleaving process controlled by a releasable constraint plate. In some embodiments this constraint plate may comprise a plate that can couple side forces (the “P-plate”) and a thin, softer compliant layer (the “S-layer”) situated between the P-plate and the substrate. In certain embodiments a porous surface within the releasable constraint plate and in contact to the substrate, allows the constraint plate to be secured to the substrate via a first pressure differential. Application of a combination of a second pressure differential within a pre-existing cleaved portion, and a linear force to a side of the releasable constraint plate bound to the substrate, generates loading that results in controlled cleaving along the cleave plane. |
申请公布号 |
US8993410(B2) |
申请公布日期 |
2015.03.31 |
申请号 |
US201113225172 |
申请日期 |
2011.09.02 |
申请人 |
Silicon Genesis Corporation |
发明人 |
Henley Francois;Lamm Al;Chow Yi-Lei |
分类号 |
H01L21/30;H01L21/762;H01L21/683;H01L21/67;H01L31/0392;H01L31/068;H01L31/0687;H01L31/18;H01L21/78;H01L21/304 |
主分类号 |
H01L21/30 |
代理机构 |
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代理人 |
|
主权项 |
1. A method comprising:
providing a plate in communication with a surface of a workpiece including a subsurface cleaved portion extending a part of a length of the workpiece; constraining movement of the plate along a first axis; and applying compressed gas to a gap between the cleaved portion and the remaining workpiece, so that a compliant characteristic along the first axis accommodates a moment acting upon the subsurface cleaved portion during a controlled cleaving. |
地址 |
San Jose CA US |