METHOD FOR PRODUCING m-PLANE NITRIDE-BASED LIGHT-EMITTING DIODE

摘要

Provided is a novel method for producing an m-plane nitride-based LED, the method making it possible to obtain an m-plane nitride-based LED reduced in forward voltage. The method comprising (i) a step of forming an active layer consisting of a nitride semiconductor over an n-type nitride semiconductor layer in which an angle between the thickness direction and the m-axis of a hexagonal crystal is 10 degrees or less, (ii) a step of forming an AlGaN layer doped with a p-type impurity over the active layer, (iii) a step of forming a contact layer consisting of InGaN is formed on the surface of the AlGaN layer, and (iv) a step of forming an electrode on the surface of the contact layer.