Photoelectric conversion element

摘要

A photoelectric conversion element includes a photoelectric conversion layer to include a first metal layer, a semiconductor layer, and a second metal layer, all of which are laminated. In addition, at least one of the first metal layer and the second metal layer is a nano-mesh metal having a plurality of through holes or a dot metal having a plurality of metal dots arranged separately from each other on the semiconductor layer. The photoelectric conversion layer includes a long-wavelength absorption layer containing an impurity which is different from impurities for p-type doping and n-type doping of the semiconductor layer. The long-wavelength absorption layer is within a depth of 5 nm from the nano-mesh metal or the dot metal.

主权项

1. A photoelectric conversion element comprising:
a semiconductor layer having a p-type semiconductor layer and an n-type semiconductor layer to form a pn-junction; a long-wavelength absorption layer partially provided in the p-type semiconductor layer within a depth of 5 nm from a surface of the p-type semiconductor layer, the long-wavelength absorption layer containing an impurity different from impurities for p-type doping and n-type doping of the semiconductor layer and absorbing light having a wavelength longer than light absorbed into the semiconductor layer, the light entering from a side of the n-type semiconductor layer; and a metal layer provided to contact the long-wavelength absorption layer, the metal layer being a nano-mesh metal having a plurality of through holes or a dot metal having a plurality of metal dots arranged separately from each other.