发明名称 |
Error correction code rate management for nonvolatile memory |
摘要 |
An apparatus having an interface and a circuit is shown. The interface is coupled to a memory that is nonvolatile. The circuit is configured to (i) read a plurality of codewords from a block in the memory based on a program/erase count associated with the block, (ii) count a number of iterations used to decode the codewords and (iii) decrease a code rate of an error correction coding used to program the block in response to the number of iterations exceeding a threshold. |
申请公布号 |
US8996961(B2) |
申请公布日期 |
2015.03.31 |
申请号 |
US201313798696 |
申请日期 |
2013.03.13 |
申请人 |
Seagate Technology LLC |
发明人 |
Chen Zhengang;Werner Jeremy;Cohen Earl T.;Chen Ning;Alhussien AbdelHakim S.;Haratsch Erich F. |
分类号 |
G11C29/10;G06F11/10 |
主分类号 |
G11C29/10 |
代理机构 |
|
代理人 |
Maiorana, PC Christopher P. |
主权项 |
1. An apparatus comprising:
an interface configured to process a plurality of read/write operations to/from a memory; and a control circuit configured to (i) read all codewords from a block in the memory in response to one or more trigger events, wherein the trigger events occur when (a) a program/erase count of the block reaches a predetermined value and (b) a predetermined time elapses since a previous trigger event and before the program/erase count reaches the predetermined value, (ii) count a number of iterations used to decode the codewords read from the block and (iii) decrease a code rate of an error correction coding used to program the block where the number of iterations exceeds a threshold. |
地址 |
Cupertino CA US |