发明名称 |
Method for manufacturing solar cell |
摘要 |
A method of manufacturing a solar cell is disclosed. The method includes forming a dielectric film on a semiconductor substrate doped with a first conductive type impurity, exposing a high concentration doping region of a predetermined selective emitter by partially removing the dielectric film, and ion-implanting a second conductive type impurity into a front surface of the semiconductor substrate with the dielectric film formed thereon to form a high concentration doping layer in the semiconductor substrate to correspond to the high concentration doping region and to form a low concentration doping layer in the semiconductor substrate to correspond to a region in which the dielectric film is formed. |
申请公布号 |
US8993423(B2) |
申请公布日期 |
2015.03.31 |
申请号 |
US201313932438 |
申请日期 |
2013.07.01 |
申请人 |
Shinshung Solar Energy Co., Ltd. |
发明人 |
Kim Ji Soo;Kim Ho Sik;Kim Ji Sun;Lim Jong Youb;Hwang Yeon Hee;Choi Hoon Joo;Jo Jeong Jae |
分类号 |
H01L31/065;H01L31/0236 |
主分类号 |
H01L31/065 |
代理机构 |
The Webb Law Firm |
代理人 |
The Webb Law Firm |
主权项 |
1. A method of manufacturing a solar cell, the method comprising:
(a) forming a dielectric film on a front surface of a semiconductor substrate doped with a first conductive type impurity; (b) following step (a), exposing a high concentration doping region of a predetermined selective emitter by partially removing the dielectric film; and (c) following step (b), ion-implanting a second conductive type impurity into the front surface of the semiconductor substrate to form a high concentration doping layer in the semiconductor substrate to correspond to the high concentration doping region and to simultaneously form a low concentration doping layer in the semiconductor substrate to correspond to a region in which the dielectric film is formed without the use of a high-temperature process. |
地址 |
Seongnam-si KR |