发明名称 Method for manufacturing solar cell
摘要 A method of manufacturing a solar cell is disclosed. The method includes forming a dielectric film on a semiconductor substrate doped with a first conductive type impurity, exposing a high concentration doping region of a predetermined selective emitter by partially removing the dielectric film, and ion-implanting a second conductive type impurity into a front surface of the semiconductor substrate with the dielectric film formed thereon to form a high concentration doping layer in the semiconductor substrate to correspond to the high concentration doping region and to form a low concentration doping layer in the semiconductor substrate to correspond to a region in which the dielectric film is formed.
申请公布号 US8993423(B2) 申请公布日期 2015.03.31
申请号 US201313932438 申请日期 2013.07.01
申请人 Shinshung Solar Energy Co., Ltd. 发明人 Kim Ji Soo;Kim Ho Sik;Kim Ji Sun;Lim Jong Youb;Hwang Yeon Hee;Choi Hoon Joo;Jo Jeong Jae
分类号 H01L31/065;H01L31/0236 主分类号 H01L31/065
代理机构 The Webb Law Firm 代理人 The Webb Law Firm
主权项 1. A method of manufacturing a solar cell, the method comprising: (a) forming a dielectric film on a front surface of a semiconductor substrate doped with a first conductive type impurity; (b) following step (a), exposing a high concentration doping region of a predetermined selective emitter by partially removing the dielectric film; and (c) following step (b), ion-implanting a second conductive type impurity into the front surface of the semiconductor substrate to form a high concentration doping layer in the semiconductor substrate to correspond to the high concentration doping region and to simultaneously form a low concentration doping layer in the semiconductor substrate to correspond to a region in which the dielectric film is formed without the use of a high-temperature process.
地址 Seongnam-si KR