Method for manufacturing an opto-microelectronic device

摘要

Method for manufacturing a microelectronic device from a first substrate (10), including the production of at least one electronic component in the semi-conductor substrate after transferring the first substrate (10) onto a second substrate (20), characterized in that it comprises:
a first phase carried out prior to the transfer, and including forming at least one pattern made of a sacrificial material in a layer of the first substrate (10),a second phase carried out after the transfer and including the substitution of the electronic component for the pattern.

主权项

1. A method for manufacturing an opto-microelectronic device from a first semiconductor substrate, comprising the production of at least one electrode of a pixel after a transfer of the first semiconductor substrate onto a second substrate, the method comprising:
a first phase carried out before the transfer and comprising: i) forming at least one pattern made of a sacrificial material in a layer formed in the first substrate surface, ii) a lateral delimitation of the at least one pattern in the layer of the first substrate surface by an edge of a boundary material differing from the sacrificial material, a second phase carried out after the transfer and comprising a substitution of the electrode for the pattern including a removal of the sacrificial material of the pattern by a selective etching so configured as to attack the sacrificial material of the pattern and to preserve the boundary material without using photolithography.