Optoelectronic devices and applications thereof

摘要

In one aspect, optoelectronic devices are described herein. In some embodiments, an optoelectronic device comprises a fiber core, a radiation transmissive first electrode surrounding the fiber core, at least one photosensitive inorganic layer surrounding the first electrode and electrically connected to the first electrode, and a second electrode surrounding the inorganic layer and electrically connected to the inorganic layer. In some embodiments, the device comprises a photovoltaic cell.

主权项

1. A photovoltaic device comprising:
a fiber core; a radiation transmissive first electrode surrounding the fiber core; at least one photosensitive amorphous silicon layer surrounding the first electrode and electrically connected to the first electrode, the photosensitive amorphous silicon layer comprising hydrogen passivated amorphous silicon (a-Si:H) and having a thickness less than 500 nm; and a non-radiation transmissive second electrode surrounding the photosensitive amorphous silicon layer and electrically connected to the photosensitive amorphous silicon layer, wherein the device demonstrates less than about a 20 percent reduction in initial conversion efficiency from the Staebler-Wronski effect.