Oxide retainer method for MEMS devices

摘要

A method and structure for fabricating a monolithic integrated MEMS device. The method includes providing a substrate having a surface region and forming at least one conduction material and at least one insulation material overlying at least one portion of the surface region. At least one support structure can be formed overlying at least one portion of the conduction and insulation surface regions, and at least one MEMS device can be formed overlying the support structure(s) and the conduction and insulation surface regions. In a variety of embodiments, the support structure(s) can include dielectric or oxide materials. The support structure(s) can then be removed and a cover material can be formed overlying the MEMS device(s), the conduction and insulation materials, and the substrate. In various embodiments, the removal of the support structure(s) can be accomplished via a vapor etching process.

主权项

1. A method for fabricating a monolithically integrated MEMS device, the method comprising:
providing a substrate having a surface region; forming at least one insulation material overlying at least one portion of the surface region, the insulation material having an insulation surface region; forming at least one conduction material overlying the at least one portion of the surface region, the conduction material having a conduction surface region; forming multiple oxide retainers, each oxide retainer including a patterned small support structure overlying at least one portion of the conduction and insulation surface regions; forming at least one MEMS device overlying at least one portion of the conduction and insulation surface regions, the MEMS device(s) overlying the oxide retainers, the oxide retainers being configured to support the MEMS device and to reduce stiction; removing the oxide retainers, the oxide retainers being configured to reduce diffusion limitation of the removal process; and forming a cover material overlying the MEMS device, at least one portion of the conduction and insulation materials, and at least one portion of the substrate.