Epitaxy reactor internal component geometries for the growth of superior quality group III-nitride materials

摘要

The geometry of transition from cylindrical to rectangular shape through the conical part in hydride vapor phase epitaxial (HVPE) systems for deposition of III-nitride films is disclosed. It is used to ensure the laminar gas flow inside the growth zone of the system. For the velocity of flow within the atmospheric pressure reactor to be sufficient, the precursors are injected through the narrow diameter tubing injectors. The quartz reactor geometry is introduced to control the transition from jet to laminar flow.

主权项

1. A gas flow distribution unit between source and growth zone of a hydride vapor phase epitaxy reactor for III-Nitride growth including a nitrogen precursor insert of predominantly rectangular cross-section having an aspect ratio ranging from approximately 0.01 to approximately 0.5 used to transport a mix of a carrier gas and ammonia to the growth zone.