发明名称 Semiconductor device and control method of the same
摘要 The present invention provides a semiconductor memory and a control method therefor, the semiconductor device including a first current-voltage conversion circuit connected to a core cell provided in a nonvolatile memory cell array, a second current-voltage conversion circuit connected to a reference cell through a reference cell data line, a sense amplifier sensing an output from the first current-voltage conversion circuit and an output from the second current-voltage conversion circuit, a compare circuit comparing a voltage level at the reference cell data line with a predefined voltage level, and a charging circuit charging the reference cell data line, if the voltage level at the reference cell data line is lower than the predefined voltage level during pre-charging the reference cell data line. According to the present invention, the pre-charging period of the reference cell data line can be shortened, and the data read time can be shortened.
申请公布号 US8995215(B2) 申请公布日期 2015.03.31
申请号 US201314081987 申请日期 2013.11.15
申请人 Spansion LLC 发明人 Ogawa Akira;Yano Masaru
分类号 G11C7/02;H01L27/105;G11C16/04;G11C16/28 主分类号 G11C7/02
代理机构 代理人
主权项 1. A method for fabricating a semiconductor device, comprising: fabricating a first current-voltage conversion circuit coupled to a core cell data line; forming a second current-voltage conversion circuit coupled a reference cell data line; and manufacturing a charging circuit coupled to the reference cell data line, wherein said charging circuit is operable to pre-charge the reference cell data line, and said reference cell data line is pre-charged faster than the core cell data line.
地址 Sunnyvale CA US