Manufacturing method for forming a self aligned contact

摘要

The present invention provides a manufacturing method of a semiconductor device, at least containing the following steps: first, a substrate is provided, wherein a first dielectric layer is formed on the substrate, at least one metal gate is formed in the first dielectric layer and at least one source drain region (S/D region) is disposed on two sides of the metal gate, at least one first trench is then formed in the first dielectric layer, exposing parts of the S/D region. The manufacturing method for forming the first trench further includes performing a first photolithography process through a first photomask and performing a second photolithography process through a second photomask, and at least one second trench is formed in the first dielectric layer, exposing parts of the metal gate, and finally, a conductive layer is filled in each first trench and each second trench.

主权项

1. A manufacturing method of a semiconductor device, at least comprising the following steps:
providing a substrate, wherein a first dielectric layer is formed on the substrate, at least one metal gate is formed in the first dielectric layer and at least one source drain region (S/D region) is disposed on two sides of the metal gate; forming at least one first trench in the first dielectric layer, exposing parts of the S/D region, wherein the manufacturing method for forming the first trench further comprises performing a first photolithography process through a first photomask and performing a second photolithography process through a second photomask; forming at least one second trench in the first dielectric layer, exposing parts of the metal gate, wherein parts of the second trenches and parts of the first trenches partially overlap each other; and filling a conductive layer in each first trench and each second trench.