| 摘要 |
<p>The present invention relates to a vertical light emitting diode and a manufacturing method thereof. The vertical light emitting diode according to the present invention is based on a nitride semiconductor with p-n junction, and forms a transparent material layer having refractive index different from a p type clad layer and a pattern structure on the p type clad layer. The vertical light emitting diode forms a refractive metal electrode layer as a p-electrode on the transparent material layer, and forms a pattern on the p-electrode by forming a stereoscopic pattern on the transparent material layer and depositing the p-electrode. The present invention emits the light with a wide radiation angle outputted from an active layer by the pattern formed on the p-electrode, and enhances reflectivity according to the refractive index of the patterned type and material. The vertical light emitting diode according to the present invention emits the light with a wide angle by the pattern on the p-electrode while being manufactured by a simple process, thereby enhancing efficiency because of high reflection efficiency.</p> |
