| 摘要 |
PROBLEM TO BE SOLVED: To inhibit fluctuation of contact resistance, which is caused by variation in the contact area between contact plugs.SOLUTION: A semiconductor device comprises: a contact hole SCH which is formed on interlayer insulation films IL3, IL2, IL1 in a self-alignment manner, and pierces a part sandwiched by two wiring parts WE and a part sandwiched by two gate wiring parts to reach a polysilicon plug BSP; and a polysilicon plug SCP which is formed in the contact hole SCH and contacts the polysilicon plug BSP. |
