SEMICONDUCTOR MEMORY DEVICE

摘要

PROBLEM TO BE SOLVED: To efficiently perform a writing operation in a semiconductor memory device including a variable resistance element.SOLUTION: A semiconductor memory device includes a memory cell MC and a control circuit for writing data in the memory cell MC. The memory cell MC includes: a first electrode 20; a first resistance change layer 22 formed on the first electrode 20; a second resistance change layer 24 formed on the first resistance change layer 22 and having a smaller resistance value than the first resistance change layer 22; a third resistance change layer 26 formed on the second resistance change layer 24 and having a larger resistance value than the second resistance change layer 24; and a second electrode 28 formed on the third resistance change layer 26. The control circuit applies a first voltage pulse P1 to the memory cell, and then applies a second voltage pulse P2 having the same polarity as the first voltage pulse P1 and having a shorter rise time than the first voltage pulse P1 to the memory cell.