SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a substrate processing apparatus which can inhibit generation of a particle at the time of discharging a wafer.SOLUTION: A substrate processing apparatus which forms a film including a reaction product on a substrate by performing a plurality of times of a supply cycle of sequentially supplying on a surface of the substrate, at least two kinds of reaction gases which react to each other in a container comprises: a rotary table which is provided in the container in a rotatable manner and has a recess for placing the substrate on a surface and a through hole formed in the recess, which is connected to the recess; a lifting mechanism having a lifting pin used when the substrate placed on the recess is transferred; and a control part for controlling actuation of the lifting mechanism. The control part controls the lifting mechanism so as to discharge the substrate from the recess by transferring the lifting pin in an inward radial direction related to rotation of the rotary table while transferring the lifting pin in an upward vertical direction in a state where the lifting pin abuts against the substrate via the through hole.