GaSb/InAs/Si (111) STRUCTURE AND METHOD FOR FORMING THE SAME EXCELLENT IN COMPLETENESS OF SURFACE SMOOTHNESS AND CRYSTAL STRUCTURE, AND MOS DEVICE AND INFRARED RAY DETECTION DEVICE USING THE STRUCTURE

摘要

PROBLEM TO BE SOLVED: To provide a GaSb/InAs/Si (111) structure excellent in surface smoothness and completeness of a crystal structure.SOLUTION: After an InAs two-dimensional layer having a thickness at least 2 nm or more is formed as a buffer layer by a molecular beam epitaxy method on a cleaned Si (111) substrate surface, further on the InAs two-dimensional layer, a GaSb epitaxial thin film is formed which is excellent in surface smoothness and has low defect density by the molecular beam epitaxy method.