| 摘要 |
PROBLEM TO BE SOLVED: To provide a resistance-change memory device that allows achieving switching operation by a low current, and to provide a method of manufacturing the same.SOLUTION: A resistance-change memory device includes a substrate, first and second wiring lines, and a memory element. The first and second wiring lines are disposed on the substrate so as to cross to each other. The memory element is disposed at an intersection of the first and second wiring lines between the first and second wiring lines. The memory element includes first and second electrodes, a resistance-change film, and a tantalum oxide (TaOx) layer. The first electrode is electrically connected to the first wiring line. The resistance-change film is deposited on the first electrode. The second electrode is formed on the resistance-change film and is electrically connected to the second wiring line. The tantalum oxide (TaOx) layer is disposed between the first electrode and the resistance-change film, and is in contact with the resistance-change film. |
