| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a photoelectric conversion element having high conversion efficiency.SOLUTION: A photoelectric conversion element manufacturing method comprises a photoelectric conversion layer precursor formation process of forming on a first electrode, a photoelectric conversion layer precursor including at least a compound semiconductor of any of a chalcopyrite compound, a stenite compound and a kestenite compound. In the photoelectric conversion precursor obtained in the photoelectric conversion layer precursor formation process, the compound semiconductor on the first electrode side is amorphous and/or an average crystal grain size of the compound semiconductor on the first electrode side is larger than an average grain size of the compound semiconductor on the side opposite to the first electrode. A photoelectric conversion element also comprises an immersion process of immersing after the photoelectric conversion layer precursor formation process, the photoelectric conversion precursor formed on the first electrode in a fluid having at least one element between group IIa and group IIb at a temperature within a range of not less than 0°C and not more than 60°C. |
