| 摘要 |
<p>PROBLEM TO BE SOLVED: To achieve a semiconductor device which is low in cost and inhibits generation of warpage of a silicon substrate and the like and a crack in a nitride semiconductor layer, and which has favorable characteristics.SOLUTION: A semiconductor device comprises on a substrate 10: a buffer layer 22 formed by a nitride semiconductor; a first semiconductor layer 31 formed on the buffer layer 22 by a nitride semiconductor; a second semiconductor layer 32 formed on the first semiconductor layer 31 by a nitride semiconductor; a gate electrode 41 formed on the second semiconductor layer 32; and a source electrode 42 and a drain electrode 43, in which the buffer layer 22 is doped with both of an element selected from C, Mg, Fe, Co and an element selected from Si, Ge, Sn, O.</p> |
