NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE

摘要

The present invention provides a nitride semiconductor light emitting device to check irradiation when an ultra violet ray is irradiated. The present invention has a light emitting layer between an n-type nitride semiconductor layer and a p-type nitride semiconductor layer. A main light emitting wavelength is an ultra violet ray to be less than 375nm, and the n-type nitride semiconductor layer includes AlnGa1-nN(0<=n<=1), wherein the C condensation is over 1×1017/cm3.