| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device capable of preventing short-circuiting between a gate electrode and a source/drain region of a transistor, and to provide a method of manufacturing the semiconductor device.SOLUTION: In a semiconductor device DV, a first insulating layer HM1 which is formed on a gate electrode GE and contains nitride silicon has, on an upper surface thereof, a recess SL formed in a region above a second electrode layer GE2 containing silicide of the gate electrode GE. |
