INTERNAL STRESS EVALUATION METHOD OF SILICON CARBIDE SINGLE CRYSTAL WAFER, AND PREDICTION METHOD OF WARP OF SILICON CARBIDE SINGLE CRYSTAL WAFER

摘要

PROBLEM TO BE SOLVED: To provide a method for evaluating an internal stress of a SiC single crystal wafer, and a method for predicting warp of the SiC single crystal wafer after completion of polishing by evaluating the internal stress of the wafer.SOLUTION: A wave number shift quantity of Raman scattering light is measured on two spots in a SiC single crystal wafer surface, and the internal stress is evaluated by a difference therebetween. Further, in a method for predicting beforehand warp of a silicon carbide single crystal wafer produced by a sublimation recrystallization method, warp of the SiC single crystal wafer is predicted by using an evaluation index.