| 摘要 |
PROBLEM TO BE SOLVED: To provide a magnetoresistive element capable of reducing a write current, and a magnetic memory.SOLUTION: The magnetoresistive element includes a film having a nitrogen containing layer, a recording film which includes a born containing first layer formed on the film having the nitrogen containing layer, and being a storage film having a magnetic anisotropy perpendicular to the film face and a variable magnetizing direction, and a second layer formed on the first layer and containing boron with a concentration less than the first layer; an intermediate layer formed on the storage film; and a reference film formed on the intermediate layer, having a magnetic anisotropy perpendicular to the film face and a fixed magnetizing direction. |
