| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a semiconductor device which can differentiate threshold voltages of a plurality of MOS transistors each having a metal gate with a circumference covered with an insulation film.SOLUTION: The semiconductor device comprises a first gate electrode 16a and a second gate electrode 16b each of which includes a first metal layer formed via a gate insulation film 12, a second metal layer including work function metal and a third metal layer, in a first and a second region, respectively, on a semiconductor substrate 1. The semiconductor device includes a structure in which the third metal layer in the second gate electrode 16b is thinner than the third metal layer in the first gate electrode 16a; and a concentration of work function metal in the first metal layer in the second gate electrode 16b is higher than a concentration of work function metal in the first metal layer in the first gate electrode 16a.</p> |
