METHOD FOR ANALYZING AND SEMICONDUCTOR ETCHING DEVICE

摘要

The present invention is a method for analyzing data of an etching device processing a wafer in plasma to specify the wavelength and the time used to control an etching process among a plurality of wavelengths and time configuring light emission data of the plasma. To achieve this, the analyzing method of the present invention acquires plasma light emission data indicating light emission intensity with regard to different wavelengths and time obtained during the etching process measured at a plurality of different etching processing conditions; evaluates the relationship between the change in the etching processing conditions with regard to the with regard to different wavelengths and time of the plasma light emission data, and the change in the light emission intensity with regard to the relevant wavelength and time; and specifies the wavelength and the time of the plasma light emission data used in adjusting the etching processing conditions based on the evaluated result.