| 摘要 |
<p>The present invention relates to a data reading method on a page buffer of a memory operated at low voltage for securing stable operation of a memory at low voltage. The memory includes a sensing amplifier and a column decoder connected to a sensing node (SNODE) of the sensing amplifier. Whenever the lowest bit of a column address is changed, the sensing node of the sensing amplifier is precharged above reference voltage.</p> |
