| 摘要 |
PROBLEM TO BE SOLVED: To provide a SiC single crystal wafer that is manufactured from an SiC single crystal ingot grown in a sublimation recrystallization method and that has low dislocation density as a wafer for device manufacture and small elastic strain in the wafer, and actualizes high device performance and a high yield of device manufacture.SOLUTION: An SiC single crystal wafer has a basal surface dislocation density of 1,000 pieces/cmor less, a penetration spiral dislocation density of 500 pieces/cmor less, and a Raman index of 0.2 or less. A method of manufacturing a SiC single crystal ingot 2 is characterized in single crystal growth in which temperature distribution change of the single crystal ingot is suppressed by controlling heat input from a side face eof the single crystal ingot 2 during the single crystal growth. |
