| 摘要 |
<p>PROBLEM TO BE SOLVED: To achieve higher performance in a thin film transistor in which an oxide is applied for a channel and a gate insulating layer thereof, and simplification of a manufacturing process for the thin film transistor.SOLUTION: One thin film transistor 100 of the present invention includes a gate insulating layer 34 formed between a gate electrode 20 and a channel 44, the gate insulating layer being an oxide comprising lanthanum and zirconium (the oxide is capable of containing inevitable impurities, and also same with other oxides) or an oxide comprising lanthanum and tantalum. The content of carbon (C) in the gate insulating layer 34 is 0.5 atom% or more and 15 atom% or less, and the content of hydrogen (H) in the gate insulating layer 34 is 2 atom% or more and 20 atom% or less. The channel 44 is one channel oxide layer selected from a group consisting of an oxide comprising indium, an oxide comprising indium and tin, an oxide comprising indium and zinc, and an oxide comprising indium, zirconium and zinc.</p> |
