| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a semiconductor storage device capable of suppressing deterioration of memory cells.SOLUTION: A semiconductor storage device of an embodiment includes: a plurality of first wirings; a plurality of second wirings extending so as to intersect the first wirings; a plurality of memory cells which are arranged at each of intersections of the first wirings and second wirings and include a variable resistive element; and a control circuit that controls voltage to be applied to the memory cells. The control circuit is configured to execute a set operation in which a set voltage is applied to a selected memory cell that is connected to a selected first wiring and selected second wiring when the set operation for changing the memory cells to a set state is performed. The control circuit is configured to execute an additional set operation in which a voltage application time of the set voltage is changed according to the state of change in the selected memory cell during the set operation and the set voltage is applied to the selected memory cell.</p> |
