| 摘要 |
The present specification discloses precursors and a method for forming silicon-containing films. In one aspect, the precursors comprise compounds represented by chemical formulae (A) to (E). In a specific embodiment, the organoaminosilane precursors are effective in low-temperature (e.g. 350°C or lower) atomic layer deposition (ALD) or plasma-enhanced atomic layer deposition (PEALD) on a silicon-containing film. Moreover, the present specification discloses a composition comprising organoaminosilane disclosed in the present specification and substantially dispensing with one or more selected from amine, halides (e.g. Cl, F, I and Br), higher molecular weight species and a tiny amount of metal. |
