| 摘要 |
PROBLEM TO BE SOLVED: To solve problems that, for example, a drive circuit is incorporated to a COG implemented driver IC, a wiring from the driver IC to a counter electrode becomes longer, and an S/N ratio becomes smaller, when a CMOS (complementary type) thin film transistor is used on a TFT substrate in the vicinity of the counter electrode for forming the drive circuit, a production process is complicated, and when the drive circuit is formed on the TFT substrate in the vicinity of the counter electrode by a single channel thin film transistor, drive capacity becomes smaller.SOLUTION: An in-cell type touch panel drive circuit comprises: a thin film transistor for controlling whether a signal for driving the counter electrode is passed or not in touch time; and a thin film transistor for controlling whether counter electrode voltage is passed or not in display time. The drive circuit makes gate voltage applied to the thin film transistor in drive signal through time higher than gate voltage applied to the thin film transistor in counter electrode voltage through time. |
