发明名称 Cu-Ga ALLOY TARGET MATERIAL
摘要 <p>PROBLEM TO BE SOLVED: To provide a new Cu-Ga alloy target material which can suppress the occurrence of cracks and chips during machining such as cutting and grinding and during sputter film deposition, can stably form a film at the time of sputter film deposition, and can suppress the generation of a nodule on a target material surface.SOLUTION: A Cu-Ga alloy target material comprises, by mass %, 25-35% of Ga and the balance being Cu and inevitable impurities, and contains 0.1% or less of C. Preferably, Vickers hardness of the Cu-Ga alloy target material is 450 HV or more.</p>
申请公布号 JP2015059246(A) 申请公布日期 2015.03.30
申请号 JP20130194308 申请日期 2013.09.19
申请人 HITACHI METALS LTD 发明人 TAMADA YU;SAITO KAZUYA;SATO TATSUYA
分类号 C23C14/34 主分类号 C23C14/34
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