| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a technique of forming a resist thick film having a sufficient thickness of 20μm or more, by using a resist that is incapable of forming sufficient thickness by the resist itself, and to provide a technique of forming and arranging a thick lens using the resist thick film inside a solid-state image sensor as efficiently as possible.SOLUTION: A method for using a thick film includes: forming a dam 13 in a matrix state on a transparent substrate 2; filling inside the dam 13 with a resin layer 15 and a resist layer 14 to form a resist thick film; developing an image after a gray scale light exposure 16 to obtain a three-dimensional shape (lens element); and dry-etching to transfer the three-dimensional shape to a resin layer 15.</p> |
