| 摘要 |
A solid-state imaging device 1 has: a semiconductor substrate 20 having a principal surface 20a and a principal surface 20b opposed to each other, and provided with a plurality of photosensitive regions 3 on the principal surface 20a side; and an insulating film 61 having a principal surface 61a and a principal surface 61b opposed to each other, and arranged on the semiconductor substrate 20 so that the principal surface 61a is opposed to the principal surface 20a. A cross section parallel to a thickness direction of the semiconductor substrate 20, of a region corresponding to each photosensitive region 3 in the principal surface 20a of the semiconductor substrate 20 is a corrugated shape in which concave curves and convex curves are alternately continuous. A cross section parallel to a thickness direction of the insulating film 61, of a region corresponding to each photosensitive region 3 in the principal surface 61a of the insulating film 61 is a corrugated shape in which concave curves and convex curves are alternately continuous corresponding to the principal surface 20a. The principal surface 61b of the insulating film 61 is flat. |
