发明名称 Method and Apparatus for Controlling Substrate DC-Bias and Ion Energy and Angular Distribution During Substrate Etching
摘要 <p>Provided is a variable capacitor in a radio frequency (RF) transmission path to a bias electrode, which is a capacitor added to an impedance matching circuit provided in the RF power transmission path to a bias electrode. An RF power supply unit operates in a pulsed mode to transmit RF power pulses through the RF power transmission path to a bias electrode. The capacitance of the variable capacitor is set to control a DC bias voltage establishment rate on a substrate exiting on the bias electrode during each pulse of RF power transmission. The DC bias voltage establishment rate on the substrate controls an ion energy distribution and an ion angular distribution of plasma exposed to an electromagnetic filed coming from the substrate.</p>
申请公布号 KR20150032638(A) 申请公布日期 2015.03.27
申请号 KR20140124252 申请日期 2014.09.18
申请人 LAM RESEARCH CORPORATION 发明人 SRIRAMAN SARAVANAPRIYAN;PATERSON ALEXANDER
分类号 H01L21/02;H01L21/3065 主分类号 H01L21/02
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