| 摘要 |
<p>A semiconductor device includes a semiconductor substrate having one main surface in which an anode of a diode is formed. At a distance from the outer periphery of the anode, a guard ring is formed to surround the anode. The anode includes a p+-type diffusion region, a p−-type region, and an anode electrode. The p−-type region is formed as a region of relatively high electrical resistance sandwiched between the p+-type diffusion regions.</p> |
