| 发明名称 |
METHOD OF FORMING A HIGH ELECTRON MOBILITY TRANSISTOR |
| 摘要 |
A method of forming a high electron mobility transistor may include: forming a second III-V compound layer on a first III-V compound layer, the second III-V compound layer and the first III-V compound layer differing in composition; forming a p-type doped region in the first III-V compound layer; forming an n-type doped region in the second III-V compound layer, the n-type doped region overlying the p-type doped region; forming a source feature over the second III-V compound layer, the source feature overlying the n-type doped region; and forming a gate electrode over the second III-V compound layer, the gate electrode disposed laterally adjacent to the source feature. |
| 申请公布号 |
US2015087118(A1) |
申请公布日期 |
2015.03.26 |
| 申请号 |
US201414549352 |
申请日期 |
2014.11.20 |
| 申请人 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
发明人 |
Chiang Chen-Hao;Chen Chi-Ming;Yu Chung-Yi;Liu Po-Chun;Chiu Han-Chin |
| 分类号 |
H01L29/778;H01L29/20;H01L29/66 |
主分类号 |
H01L29/778 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of forming a high electron mobility transistor (HEMT), the method comprising:
forming a second III-V compound layer on a first III-V compound layer, the second III-V compound layer and the first III-V compound layer differing in composition; forming a p-type doped region in the first III-V compound layer; forming an n-type doped region in the second III-V compound layer, the n-type doped region overlying the p-type doped region; forming a source feature over the second III-V compound layer, the source feature overlying the n-type doped region; and forming a gate electrode over the second III-V compound layer, the gate electrode disposed laterally adjacent to the source feature. |
| 地址 |
Hsin-Chu TW |
