发明名称 CAPACITOR DEVICE
摘要 In some embodiments, a capacitor device includes a metal-oxide-metal (MOM) capacitor array and a varactor array configured overlapping with the MOM capacitor array. The MOM capacitor array includes a first MOM capacitor unit. The first MOM capacitor unit includes a first electrode pattern and a second electrode pattern in a first metallization layer. The first electrode pattern includes a plurality of first fingers and a first bus interconnecting the plurality of first fingers. The second electrode pattern includes a plurality of second fingers and a second bus interconnecting the plurality of second fingers. The varactor array includes a first varactor unit. The first varactor unit includes a first electrode contacting region and a second electrode contacting region. The first electrode pattern contacts the first electrode contacting region. The second electrode pattern contacts the second electrode contacting region.
申请公布号 US2015084107(A1) 申请公布日期 2015.03.26
申请号 US201414495368 申请日期 2014.09.24
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. 发明人 LI CHAO-CHIEH
分类号 H01L27/06;H01L49/02 主分类号 H01L27/06
代理机构 代理人
主权项 1. A capacitor device, comprising: a metal-oxide-metal (MOM) capacitor array comprising: a first MOM capacitor unit comprising: a first electrode pattern and a second electrode pattern in a first metallization layer, the first electrode pattern comprising a plurality of first fingers and a first bus interconnecting the plurality of first fingers, and the second electrode pattern comprising a plurality of second fingers and a second bus interconnecting the plurality of second fingers; and a varactor array configured overlapping with the MOM capacitor array, the varactor array comprising: a first varactor unit comprising: a first electrode contacting region; anda second electrode contacting region,wherein the first electrode pattern contacts the first electrode contacting region and the second electrode pattern contacts the second electrode contacting region.
地址 HSINCHU TW