SILICON CARBIDE SINGLE CRYSTAL SUBSTRATE

摘要

PROBLEM TO BE SOLVED: To provide a silicon carbide single crystal substrate suitable for epitaxial growth of a high-quality semiconductor layer with no crystal defect.SOLUTION: A silicon carbide single crystal substrate obtained by supplying an abrasive-free polishing liquid to an abrasive-free polishing pad to bring a polished surface of the silicon carbide single crystal substrate in contact with the polishing pad and polishing by relative motion of both of the silicon carbide single crystal substrate and the polishing pad comprises a principal surface having an atomic step terrace structure composed of an atomic step and a terrace which are derived from a crystalline structure. In the atomic step terrace structure, mean line roughness at a front end line part of the atomic step, which is obtained from an AFM (Atomic Force Microscope) image has a ratio of 20% and less with respect to a height of the atomic step.