发明名称 APPARATUS AND METHOD FOR PRODUCING POLYCRYSTALLINE SILICON
摘要 <p>PROBLEM TO BE SOLVED: To provide a technique of acquiring a polycrystalline silicon rod, which is hardly warped and has such an excellent shape that the cross-sectional roundness is high, without decreasing production efficiency.SOLUTION: A plurality of gaseous raw material supply nozzles 9 and a plurality of metal electrodes (electrode pairs) 10, which (nozzles and electrodes) are arranged respectively in a reaction furnace of an apparatus for producing polycrystalline silicon, satisfy the following arrangement relationship. Namely, a virtual concentric circle C (the radius (c)) having the center in the middle of a disk-shaped bottom plate 5 has the area S=S/2 being a half of the area Sof the bottom plate 5. Another concentric circle A and a different concentric circle B are each the virtual concentric circle which has the center at the position similar to that of the virtual concentric circle C and has the radius (a) or (b) ((a)<(b)<(c)). The plurality of electrode pairs 10 are disposed on the inside of the virtual concentric circle C and on the outside of the virtual concentric circle B and the plurality of gaseous raw material supply nozzles 9 are disposed on the inside of the virtual concentric circle A. A difference between the radius (a) of the virtual concentric circle A and that (b) of the virtual concentric circle B is set within 20-50 cm.</p>
申请公布号 JP2015057371(A) 申请公布日期 2015.03.26
申请号 JP20140235374 申请日期 2014.11.20
申请人 SHIN ETSU CHEM CO LTD 发明人 KUROSAWA YASUSHI;NETSU SHIGEYOSHI;HOSHINO SHIGEO
分类号 C01B33/035 主分类号 C01B33/035
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