发明名称 METHOD FOR PRODUCING A SUBSTRATE WITH STACKED DEPOSITION LAYERS
摘要 A stacked substrate is produced using an apparatus including an injector head device. Production includes the steps of providing an injector head device comprising a gas bearing pressure arrangement and injecting bearing gas against opposite substrate surfaces, to balance the substrate without support in a conveying plane in the injector head device. The following steps are performed iteratively: contacting opposite substrate surfaces with a first precursor gas; and with a second precursor gas, first and second precursor gases supplied in first and second deposition spaces are arranged opposite and facing respective sides of the substrate; establishing relative motion between the deposition space and the substrate in the conveying plane; and providing at least one of a reactant gas, plasma, laser-generated radiation, and/or ultraviolet radiation, in any or both reactant spaces for reacting any of the first and second precursor gas after deposition on at least part of the substrate surface.
申请公布号 US2015086729(A1) 申请公布日期 2015.03.26
申请号 US201314390620 申请日期 2013.04.02
申请人 SoLayTec B.V. 发明人 Görtzen Roger Mathias Wilhelm;Dielissen Sebastiaan Antonius Fransiskus;De Swart Joseph Adrianus Maria;Vermeer Adrianus Johannes Petrus Maria
分类号 C23C16/455;C23C16/40;C23C16/34 主分类号 C23C16/455
代理机构 代理人
主权项 1. A method for producing a substrate with stacked deposition layers, comprising: a) providing an injector head device comprising a gas bearing pressure arrangement; b) injecting bearing gas from the gas bearing pressure arrangement against opposite substrate surfaces, to balance the substrate supportless in a conveying plane in the injector head device; and iteratively performing c) contacting opposite substrate surfaces with a first precursor gas from a first precursor supply; and with a second precursor gas from a second precursor supply respectively, first and second precursor gases supplied in first and second deposition spaces arranged opposite and facing respective sides of the substrate; d) establishing relative motion between the deposition space and the substrate in the conveying plane, in order to convey the substrate to reactant spaces arranged in the injector head device opposite and facing respective sides of the substrate; and e) providing at least one of a reactant gas, plasma, laser-generated radiation, and/or ultraviolet radiation, in any or both reactant spaces for reacting any of the first and second precursor gas after deposition on at least part of the substrate surface in order to obtain an atomic layer on each of opposite sides of the substrate surface; f) wherein first and second precursor gases are at least in one of the iterations supplied simultaneously on opposite substrate surfaces.
地址 Eindhoven NL