| 发明名称 |
SEMICONDUCTOR MEMORY APPARATUS |
| 摘要 |
A semiconductor memory apparatus includes a memory block including memory cells coupled between a bit line and a source line and operating in response to voltages applied to word lines, and a peripheral circuit suitable for performing operations relating to data input and output of the memory cells, wherein the peripheral circuit is suitable for applying a precharge voltage to the bit line when word lines adjacent to a selected word line are set to a floating state. |
| 申请公布号 |
US2015085576(A1) |
申请公布日期 |
2015.03.26 |
| 申请号 |
US201414189240 |
申请日期 |
2014.02.25 |
| 申请人 |
SK hynix Inc. |
发明人 |
YOO Hyun Seung;SEO Moon Sik |
| 分类号 |
G11C16/24;G11C16/26 |
主分类号 |
G11C16/24 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor memory apparatus, comprising:
a memory block including memory cells coupled between a bit line and a source line and operating in response to voltages applied to word lines; and a peripheral circuit suitable for performing operations relating to data input and output of the memory cells, wherein the peripheral circuit is suitable for applying a precharge voltage to the bit line when word lines adjacent to a selected word line are set to a floating state. |
| 地址 |
Icheon-si KR |
