TEMPERATURE DEPENDENT BIASING FOR LEAKAGE POWER REDUCTION

摘要

Temperature dependent biasing for leakage power reduction. In some embodiments, a semiconductor device may include a biasing circuit configured to generate a voltage that varies dependent upon a temperature of the semiconductor device and a logic circuit operably coupled to the biasing circuit, where the voltage is applied to a bulk terminal of one or more transistors within the logic circuit, and where the voltage has a value outside of a voltage supply range of the logic circuit. In another embodiment, a semiconductor device may include a biasing circuit configured to generate a voltage that varies according to a temperature of the semiconductor device and a power switch operably coupled to the biasing circuit, where the voltage is applied to a gate terminal of the power switch, and where the voltage has a value outside of a voltage supply range of the power switch.

主权项

1. A semiconductor device, comprising:
a biasing circuit configured to generate a voltage that varies dependent upon a temperature of the semiconductor device; and a logic circuit operably coupled to the biasing circuit, wherein the voltage is applied to a bulk terminal of one or more transistors within the logic circuit, and wherein the voltage has a value outside of a voltage supply range of the logic circuit.