SEMICONDUCTOR DEVICE, AND MANUFACTURING METHOD FOR SAME

摘要

A semiconductor device according to an embodiment of the present invention includes a first semiconductor area, a second semiconductor area, a third semiconductor area, a first electrode, a second electrode, a control electrode, and an insulation film. The first semiconductor area includes SiC, and is of a first conductivity type. The second semiconductor area is provided above the first semiconductor area, has a first surface, includes SiC, and is of a second conductivity type. The third semiconductor area is provided above the second semiconductor area, includes SiC, and is of the first conductivity type. The first electrode conducts current to the first semiconductor area. The second electrode is conducts current to the third semiconductor area. The control electrode is provided above the second semiconductor area. The insulation film is provided between the second semiconductor area and the control electrode. The insulation film is in contact with the first surface and the control electrode, and includes nitrogen. The peak of the nitrogen concentration distribution is positioned at least 2 nm but less than 10 nm away from the first surface, and the half-value width of the peak is at least 10 nm but less than 20 nm.