| 摘要 |
Provided is a joining structure that has high reliability and reduces joining layer creep in joining semiconductor elements. As a joining structure between two types of members, the joining layer comprises a low-creep metal structure configured from an intermetallic compound layer and a low-thermal-expansion metal layer, and the equivalent linear coefficient of expansion of the joining layer is between that of a first joined material and a second joined material, thereby mitigating thermal stress and increasing reliability. |
