| 摘要 |
<p>Enhancement -mode III-N transistor with N-polarity consisting of the following layers, from the bottom: a bottom barrier layer ( 1 ); a channel layer ( 2 ); an upper barrier layer ( 3 ), the chemical composition of which is different from the composition of the bottom barrier layer; and a dielectric insulating layer ( 4 ), while the upper barrier layer/channel layer interface exhibits a negative polarization charge with an absolute value larger than the positive polarization charge at the channel layer/bottom barrier layer interface, and the transistor threshold voltage is freely adjustable.</p> |
