TI-IGBT DEVICE AND MANUFACTURING METHOD THEREOF

摘要

A TI-IGBT device and a manufacturing method thereof are provided. The manufacturing method comprises: firstly processing the front surface structure and the back surface structure of the TI-IGBT device respectively on two different silicon dies, then bonding the two silicon dies together to form the whole TI-IGBT device structure. With the manufacturing method, back photoetching process is avoided, and only common processes in semiconductor processing are used to achieve the TI-IGBT device structure, therefore the manufacturing cost for TI-IGBT device is reduced. Comparing with the TI-IGBT device formed by a traditional method, the TI-IGBT device formed by the method has excellent performance and high reliability.