| 发明名称 |
MECHANISM FOR FORMING METAL GATE STRUCTURE |
| 摘要 |
Embodiments of mechanisms for forming a semiconductor device are provided. The semiconductor device includes a semiconductor substrate and a metal gate stack formed over the semiconductor substrate. The semiconductor device also includes an insulating layer formed over the semiconductor substrate and surrounding the metal gate stack, wherein the metal gate stack includes a metal gate electrode. The semiconductor device further includes a metal oxide structure formed over the insulating layer and in direct contact with the insulating layer. The metal oxide structure includes an oxidized material of the metal gate electrode. |
| 申请公布号 |
US2015084137(A1) |
申请公布日期 |
2015.03.26 |
| 申请号 |
US201314037881 |
申请日期 |
2013.09.26 |
| 申请人 |
Taiwan Semiconductor Manufacturing Co., Ltd. |
发明人 |
HSIEH Wen-Jia;WANG Chih-Lin;CHANG Chia-Der |
| 分类号 |
H01L21/28;H01L21/285;H01L29/417;H01L29/66;H01L29/49;H01L29/51 |
主分类号 |
H01L21/28 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device, comprising:
a semiconductor substrate; a metal gate stack formed over the semiconductor substrate; an insulating layer formed over the semiconductor substrate and surrounding the metal gate stack, wherein the metal gate stack comprises a metal gate electrode; and a metal oxide structure formed over the insulating layer and in direct contact with the insulating layer, wherein the metal oxide structure comprises an oxidized material of the metal gate electrode. |
| 地址 |
Hsin-Chu TW |
