METHOD FOR PRODUCING A TRANSISTOR

摘要

The invention concerns a method for producing a transistor. The gate of the transistor is produced after having produced source and drain electrodes of the transistor. From a substrate having a stack of layers comprising at least two surface layers with a first layer of a first semiconductor material intended to produce a conduction channel of the transistor, and a second layer of a second semiconductor material situated on the first layer and intended to at least partly produce the source and drain electrodes of the transistor, the formation of a mask defining a cavity of a gate pattern and the creation of lateral recesses at the periphery of the gate pattern in the second layer and under the mask by an isotropic etching of the second material, and in that it comprises a filling of the lateral recesses with a dielectric material so as to form gate spacers therein.

主权项

1. A method for producing a field effect transistor comprising a production of a gate of the transistor after having produced source and drain electrodes of the transistor, comprising: from a substrate having a stack of layers comprising at least two surface layers with a first layer of a first semiconductor material, said first layer being configured to produce a conduction channel of the transistor, and a second layer, of a second semiconductor material different from the first semiconductor material, situated on the first, said second layer being intended to produce at least partly the source and drain electrodes of the transistor, a formation of a mask with an opening in said mask, comprising forming of a cavity creating a gate pattern in the second layer, the cavity comprising a middle part situated in line with the opening and lateral recesses at a periphery of the middle part in the second layer and under the mask, through an isotropic etching of the second material, and comprising forming of gate spacers made from a dielectric material at least in the lateral recesses, the gate being placed in at least one portion of the middle part of the cavity in contact with the first layer.